elektronische bauelemente ssg4435 -8a, -30v, r ds(on) 20m ? p-channel enhancement mode power mosfet 01-mar-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g 4435sc ????? ?? ? = date code rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the ssg4435 provide the designer with the best combination of fast switch ing, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? low on-resistance ? simple drive requirement ? fast switching marking package information package mpq leadersize sop-8 3k 13? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t a = 25c -8 continuous drain current 3 t a = 70c i d -6 a pulsed drain current 1.2 i dm -50 a power dissipation p d 2.5 w maximum junction to ambient 3 r ja 50 c / w linear derating factor 0.02 w / c operating junction & stor age temperature range t j , t stg -55~150 c sop-8 millimete r millimete r ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. s s s gd d d d
elektronische bauelemente ssg4435 -8a, -30v, r ds(on) 20m ? p-channel enhancement mode power mosfet 01-mar-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage bv dss -30 - - v v gs =0, i d =-250 a breakdown voltage temp. coefficient bv ds /t j - -0.037 - v / c reference to 25c, i d = -1ma gate-threshold voltage v gs(th) -1 - -3 v v ds =v gs , i d = -250 a forward transfer conductance g fs - 20 - s v ds = -10v, i d = -8a gate-body leakage i gss - - 100 na v gs =20v t a = 25c - - -1 a v ds = -30v, v gs =0 zero gate voltage drain current t a = 70c i dss - - -5 a v ds = -24v, v gs =0 - - 20 v gs = -10v, i d = -8a drain-source on-resistance 2 r ds(on) - - 35 m ? v gs = -4.5v, i d = -5a total gate charge 2 q g - 12.4 - gate-source charge q gs - 3.4 - gate-drain (?miller?) charge q gd - 5.1 - nc i d = -12a v ds = -20v v gs = -4.5v turn-on delay time 2 t d(on) - 24.2 - rise time t r - 23.8 - turn-off delay time t d(off) - 58.2 - fall time t f - 9 - ns v ds = -15v i d = -1a v gs = -10v r g =3.3 ? input capacitance c iss - 1345 - output capacitance c oss - 194 - reverse transfer capacitance c rss - 158 - pf v gs =0 v ds = -15v f=1.0mhz source-drain diode forward on voltage 2 v ds - -0.75 -1.2 v i s = -2.1a, v gs =0, t j =25c continuous source current (body diode) i s - - -2.1 a v d= v g= 0v, v s = -1.2v pulsed source current (body diode) 1 i sm - - -50 a notes: 1 pulse width limited by max. junction temperature. 2 pulse width Q 300us, duty cycle Q 2%. 3 surface mounted on 1 in 2 copper pad of fr4 board; 125c/w when mounted on min. copper pad.
elektronische bauelemente ssg4435 -8a, -30v, r ds(on) 20m ? p-channel enhancement mode power mosfet 01-mar-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
elektronische bauelemente ssg4435 -8a, -30v, r ds(on) 20m ? p-channel enhancement mode power mosfet 01-mar-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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